The effect of ultrasonic agitation on the stripping of photoresist using supercritical CO2 and co-solvent formulation

被引：8
|
作者：
Kim, Sung Ho [1 ]
Yuvaraj, Haldorai [1 ]
Jeong, Yeon Tae [1 ]
Park, Chan [2 ]
Kim, Sok Won [3 ]
Lim, Kwon Taek [1 ]
机构：
[1] Pukyong Natl Univ, Div Image Sci & Engn, Pusan 608739, South Korea
[2] Pukyong Natl Univ, Div Mat Engn, Pusan 608739, South Korea
[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 02期
关键词：
Photoresist; Stripping; Ultrasonic agitation; Supercritical carbon dioxide; High dose ion-implanted; PLASMA; WAFER; LITHOGRAPHY; FABRICATION; FILMS;
D O I：
10.1016/j.mee.2008.10.017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel technology for removing high-dose ion-implanted photoresist (HDI PR) from semiconductor wafers using supercritical carbon dioxide (scCO(2)) and several co-solvent formulations have been described. A combination of ultrasonic agitation with scCO(2)/co-solvent stripping was found to be an effective method for photoresist removal. Ultrasonic agitation was in efficient technique for achieving higher stripping rates. The effects of temperature, pressure, reaction time and the type of organic co-solvent on the stripping rate of HDI PR were investigated. The microstructures of sample wafers after stripping were characterized by scanning electron microscopy and energy dispersive X-ray spectrometer. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：171 / 175
页数：5
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