Field emission from CNT films deposited on porous Si

被引：0
作者：
Stepinska, Izabela [1 ]
Wronka, Halina [1 ]
Waszuk, Stanislaw [1 ]
Radomska, Joanna [1 ]
Kozlowski, Miroslaw [1 ]
Czerwosz, Elzbieta [1 ]
Craciunoiu, Florea [2 ]
机构：
[1] Tele & Radio Res Inst, PL-03450 Warsaw, Poland
[2] Natl Inst Res & Dev Microtechnol, Bucharest, Romania
来源：
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2015 | 2015年 / 9662卷
关键词：
field emission; CNTs films; porous Si; CARBON NANOTUBES; ENHANCEMENT FACTOR; HILLOCKS;
D O I：
10.1117/12.2205844
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The carbon nanotubes films on various type of porous Si substrate were prepared. Three methods of porous Si preparation electrolysis, wet etching with silver nitrate and with potassium hydroxide were used. CNTs films were obtained by two step method containing PVD and CVD process. These yield of field emission depended on the type of film. I-U characteristics and F-N plots are discussed for these films. The short-term stability of emission measurements results are also presented. Depending on technological parameters of Si etching the topography of samples is different and it affects on the emission currents intensity and the electric threshold field. The influence of substrate topography on adhesion of CNT film was also studied.
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页数：8
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