Electrodeposition and characterization of magnetostrictive galfenol (FeGa) thin films for use in microelectromechanical systems

被引:30
作者
Estrine, Eliot C. [1 ]
Robbins, William P. [1 ]
Maqableh, Mazin M. [1 ]
Stadler, Bethanie J. H. [1 ]
机构
[1] Univ Minnesota, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
ELECTROCHEMICAL DEPOSITION;
D O I
10.1063/1.4799775
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we investigate the challenges related to electrodeposition and characterization of magnetostrictive galfenol thin films as well as techniques used to overcome these issues. Successful deposition and evaluation of galfenol thin films is necessary for the design of galfenol based microelectromechanical devices. Stress is a primary concern because thick films and poor adhesion to substrates (e.g., silicon oxide) can lead to delamination and peeling. In addition, magnetostriction measurements require films that are uniform in thickness and composition over the sample area. Various adhesion layers were tested, and delamination was eliminated with Cr/Cu, which provided robust adhesion to the glass substrates used in capacitance bridge measurements. Uniformity and composition were controlled by the use of a rotating disk electrode for electrodeposition, which created a uniform boundary condition across the sample during deposition. The capacitance bridge technique was calibrated with Ni/glass samples, after which a magnetostriction of 140 ppm was measured for Fe83Ga17 films. These results represent the first magnetostriction measurements of electrodeposited galfenol. (C) 2013 American Institute of Physics.
引用
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页数:3
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