Dielectric Properties of Atomic Layer Deposited Thin-Film Barium Strontium Titanate

被引：10

作者：

Tyunina, M. ^{[1
]}

Plekh, M. ^{[1
]}

Levoska, J. ^{[1
]}

Vehkamaki, M. ^{[2
]}

Hatanpaa, M. ^{[2
]}

Ritala, M. ^{[2
]}

Leskela, M. ^{[2
]}

机构：

[1] Univ Oulu, Microelect & Mat Phys Labs, FI-90014 Oulu, Finland

[2] Univ Helsinki, Inorgan Chem Lab, FI-00014 Helsinki, Finland

来源：

INTEGRATED FERROELECTRICS | 2008年 / 102卷

基金：

芬兰科学院;

关键词：

D O I：

10.1080/10584580802557961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film capacitor heterostructures were formed by atomic layer deposition of 54 nm thick polycrystalline barium strontium titanate film on silicon substrates using Pt top and bottom electrodes. The dielectric response of capacitors was experimentally studied as a function of frequency, temperature, and applied field, and analyzed considering presence of an interface capacitance. In thin-film BST, a paraelectric state with low Curie temperature, small Curie constant, and small intrinsic permittivity is detected. The results are discussed in terms of depolarizing field, effect of low-permittivity inclusions, and grains. The commutation quality factor of capacitors is found to be satisfactory for tunable devices.

引用

页码：29 / 36

页数：8

共 27 条

[1] Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures [J].