Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory

被引：14

作者：

She, Xiao-Jian ^{[1
]}

Liu, Chang-Hai ^{[1
]}

Zhang, Jing-Yu ^{[1
]}

Gao, Xu ^{[1
]}

Wang, Sui-Dong ^{[1
]}

机构：

[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; PENTACENE; STABILITY;

D O I：

10.1063/1.4790186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pentacene-based organic field-effect transistor nonvolatile memories employing nano-floating-gate show high performance in vacuum, typically with field-effect mobility of 0.6 cm(2)/Vs, memory window of 45 V, reading ON/OFF ratio over 10(6), and excellent retention ability and programming/erasing endurance. The memory performance is unstable in air, which is demonstrated to result mainly from the device operation instability in O-2. The O-2-induced acceptor-like trap states reduce the electron supply in pentacene during programming, limiting the electron trapping into the nano-floating-gate and thus suppressing the positive threshold voltage shift. The corresponding hole trapping during erasing is not effectively influenced by the ambient gas effects. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790186]

引用

页数：5

共 29 条

[1] Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory [J].