Achieving highly electrical conductivity and piezoresistive sensitivity in polydimethylsiloxane/multi-walled carbon nanotube composites via the incorporation of silicon dioxide micro-particles
Conductive polydimethylsiloxane (PDMS) composites have attracted extensive attention worldwide due to its potential application on wearable electronics and strain sensors. In this work, silicon dioxide micro-particles (mu-SiO2) were added into the flexible PDMS/multi-walled carbon nanotubes (MWCNT) composites to improve their electrical conductivity and piezoresistive sensitivity. First, the mu-SiO2 particles can exhibit volume exclusion effect to dense MWCNT fillers in PDMS matrix, which leads to the high electrical conductivity and low percolation threshold. Furthermore, the larger mu-SiO2 particles could give higher electrical conductivity and lower percolation threshold. For examples, the electrical conductivity and percolation threshold of the PDMS/MWCNT composites with 0.3 vol% MWCNT increased from 3.5 x 10(-9) to 2.2 x 10(-4) S/m and decreased from 0.44 to 0.08 vol%, respectively, by the incorporation of 30 vol% 85 pm-SiO2 particles. Second, the piezoresistive sensitivity of PDMS/MWCNT composites was abruptly enhanced by the addition of mu-SiO2 particles because of the high modulus of mu-SiO2 particles, which resulted in the asymmetric deformation in the composites. The deformation of PDMS/MWCNT phase was higher in the PDMS/MWCNT/mu-SiO2 composites than that of the PDMS/MWCNT composites, which leaded to high piezoresistive sensitivity. For example, the gauge factor (GF) of the PDMS/MWCNT composites increased from 1.3 to 62.9 at 30% compression strain by the addition of 30 vol% 1 pm-Si02 particles. The highest piezoresistive sensitivity was found in the PDMS/MWCNT/mu-SiO2 composites with lowest size of p-Si02 particles due to the highest deformation of PDMS/MWCNT phase.
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Gao, Jiefeng
;
Hu, Mingjun
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City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Hu, Mingjun
;
Dong, Yucheng
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City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Dong, Yucheng
;
Li, Robert K. Y.
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City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Gao, Jiefeng
;
Hu, Mingjun
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机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Hu, Mingjun
;
Dong, Yucheng
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机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Dong, Yucheng
;
Li, Robert K. Y.
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City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China