Charge Dynamics and Electronic Structures of Monolayer MoS2 Films Grown by Chemical Vapor Deposition

被引：77

作者：

Shen, Chih-Chiang ^{[1
]}

Hsu, Yu-Te ^{[2
]}

Li, Lain-Jong ^{[2
]}

Liu, Hsiang-Lin ^{[1
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 11677, Taiwan

[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 12期

关键词：

INORGANIC FULLERENE-LIKE; TEMPERATURE-DEPENDENCE; VALLEY POLARIZATION; OPTICAL-ABSORPTION; MS2; M; SPECTRA; PHOTOLUMINESCENCE; NANOPARTICLES; HYDROGEN; STORAGE;

D O I：

10.7567/APEX.6.125801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapor-deposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (similar to 7 THz) decreases with decreasing temperature while carrier relaxation time (similar to 26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are similar to 0.2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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