Room-temperature observation of negative differential conductance due to large quantum level spacing in silicon single-electron transistor

被引：10

作者：

Saitoh, M ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 2A期

关键词：

silicon single-electron transistor; negative differential conductance; room temperature; ultrasmall dot; quantum level; spacing; resonant tunneling; Coulomb staircase;

D O I：

10.1143/JJAP.43.L210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed for the first time negative differential conductance (NDC) at room temperature in a silicon single-electron transistor (SET). The device is in the form of an ultranarrow wire channel metal oxide semiconductor field-effect transistor (MOSFET), which acts as a multiple-dot SET and shows large Coulomb blockade oscillations at room temperature. In the finite drain-bias characteristics, double-peak negative differential conductance (NDC) is observed even at room temperature. The reason behind the observed characteristics is considered to be the interplay between the resonant tunneling through a discrete quantum level in the ultrasmall dot and the classical Coulomb staircase effect in another dot.

引用

页码：L210 / L213

页数：4

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