Graphene as anode electrode for colloidal quantum dots based light emitting diodes

被引:11
|
作者
Klekachev, Alexander V. [1 ,2 ]
Kuznetsov, Sergey N. [3 ]
Asselberghs, Inge [1 ,4 ]
Cantoro, Mirco [1 ,2 ]
Mun, Jeong Hun [5 ]
Cho, Byung Jin [5 ]
Stesmans, Andre L. [2 ]
Heyns, Marc M. [1 ,6 ]
De Gendt, Stefan [1 ,4 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium
[3] Petrozovodsk State Univ, Dept Solid State Phys, Petrozavodsk 185910, Russia
[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium
[5] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
[6] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium
关键词
INDIUM TIN OXIDE; WORK FUNCTION; ELECTROLUMINESCENCE; FILMS; NANOCRYSTALS; SPECTROSCOPY; DEVICES; SINGLE; BRIGHT; LAYERS;
D O I
10.1063/1.4816745
中图分类号
O59 [应用物理学];
学科分类号
摘要
Graphene films demonstrating low sheet resistance and high transparency in the visible light range are promising to be used as electrodes for light-emitting applications. In this work, we report the implementation of single layer graphene as hole injecting electrode for CdSe/ZnS quantum dot-light emitting diodes (QD-LED). We compare graphene vs. indium-tin-oxide (ITO)-based anode junctions by electroluminescence intensity performance of QD-LEDs. Our results demonstrate better hole injection efficiency for the graphene-based electrode at technologically relevant current densities J < 0.4 A/cm(2), therefore, recommending single layer graphene as a valuable alternative to replace ITO in QD-LED technology. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:4
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