In situ study of stress relaxation mechanisms of pure Al thin films during isothermal annealing

被引：35

作者：

Hwang, SJ ^{[1
]}

Lee, YD ^{[1
]}

Park, YB ^{[1
]}

Lee, JH ^{[1
]}

Jeong, CO ^{[1
]}

Joo, YC ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

SCRIPTA MATERIALIA | 2006年 / 54卷 / 11期

关键词：

aluminum; thin films; plastic deformation;

D O I：

10.1016/j.scriptamat.2006.02.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is known that the compressive stress relaxation of Al thin films occurs by various deformation mechanisms. such as hillock formation, microstructural changes, and creep. In order to clarify the characteristics and quantify the contributions of each deformation mechanism, the stress relaxations of Al thin film during isothermal annealing at 194 degrees C were investigated by wafer curvature measurement and in situ hillock observation. For the stress relaxation measured by the wafer curvature method, fast relaxation and subsequent slow relaxation processes were observed. In contrast, for the stress relaxation measured by hillock formation, only one relaxation process was observed, which had a similar time constant to that of the slow relaxation process observed in the wafer curvature measurement. These results indicate that hillock formation is the most plausible mechanism for slow stress relaxation. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1841 / 1846

页数：6

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