Plasma-enhanced atomic layer deposition of BaTiO3

被引：29

作者：

Schindler, Peter ^{[1
]}

Kim, Yongmin ^{[1
]}

Thian, Dickson ^{[2
]}

An, Jihwan ^{[1
,3
]}

Prinz, Fritz B. ^{[1
,4
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[3] Seoul Natl Univ Sci & Technol, Mfg Syst & Design Engn Programme, Seoul 139743, South Korea

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

SCRIPTA MATERIALIA | 2016年 / 111卷

关键词：

High-k thin films; Atomic layer deposition (ALD); Plasma-enhanced ALD; DRAM capacitor; THIN-FILMS; TIO2; FILMS; CRYSTALLIZATION; GROWTH; SRTIO3; TEMPERATURE;

D O I：

10.1016/j.scriptamat.2015.08.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of materials. We report the successful deposition of high-k BTO thin films by PEALD. Compositional, morphological, and crystallographic characterizations of PEALD BTO are presented. The electrical performance of PEALD BTO thin films as a function of Ba-to-Ti-ratio is shown. Slightly Ti-rich BTO has the lowest equivalent oxide thickness while Ba-rich films show the lowest leakage current. (c) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：106 / 109

页数：4

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