Study on ZnO/Al/SiO2/Si layered structure saw RF filter

被引：0

作者：

Ren, TL ^{[1
]}

Yang, L ^{[1
]}

Liu, LT ^{[1
]}

Liu, JS ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2001年 / 41卷 / 1-4期

关键词：

ZnO; SAW; RF filter; Rayleigh mode; Sezawa mode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SAW filter with ZnO/Al/SiO2/Si structure was designed and fabricated. An image-impedance connection electrode structure was adopted to depress the insert loss and improve the stop-band rejection. A ZnO film was deposited by DC magnetron sputtering. The sputtering parameters, such as substrate temperature, sputtering gas pressure and deposition rate were extensively investigated. The film showed good c-axis normal orientation through x-ray analysis. The thickness of the ZnO film was designed to work at Rayleigh and Sezawa wave mode, and the center frequencies of the filters reached to 1.05 GHz and 1.48 GHz respectively.

引用

页码：1789 / 1796

页数：8

共 7 条

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[4] VISSER JH, 1989, IEEE 1989 ULTRASONICS SYMPOSIUM : PROCEEDINGS, VOLS 1 AND 2, P195, DOI 10.1109/ULTSYM.1989.66982
[5] VISSER JH, 1989, THESIS DELFT U NETHE
[6] WEBER AH, 1991, ULTRASON, P363, DOI 10.1109/ULTSYM.1991.234187
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