Atomic layer deposition of zinc sulfide with Zn(TMHD)2

被引：13

作者：

Short, Andrew ^{[1
]}

Jewell, Leila ^{[1
]}

Doshay, Sage ^{[1
]}

Church, Carena ^{[1
]}

Keiber, Trevor ^{[1
]}

Bridges, Frank ^{[1
]}

Carter, Sue ^{[1
]}

Alers, Glenn ^{[1
]}

机构：

[1] Univ Calif Santa Cruz, Dept Phys, Santa Cruz, CA 95064 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2013年 / 31卷 / 01期

基金：

美国国家科学基金会;

关键词：

ZNS THIN-FILMS; CHEMICAL BATH DEPOSITION; EPITAXY; GROWTH;

D O I：

10.1116/1.4769862

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The atomic layer deposition (ALD) of ZnS films with Zn(TMHD)(2) and in situ generated H2S as precursors was investigated, over a temperature range of 150-375 degrees C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4769862]

引用

页数：5

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