Growth of epitaxial YSZ films on LiNbO3 substrates

被引：0
|
作者：
Rubí, R
Fàbrega, L
Sandiumenge, F
Fontcuberta, J
Estop, E
机构：
[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
[2] Univ Autonoma Barcelona, Dept Geol, Bellaterra 08193, Spain
来源：
THIN SOLID FILMS | 2001年 / 400卷 / 1-2期
关键词：
oxide thin films; epitaxial growth; electro-optic substrates;
D O I：
10.1016/S0040-6090(01)01500-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the epitaxial growth and characterization of yttria-stabilized zirconia (YSZ) films on X-cut LiNbO3 single crystals. Epitaxial (100) YSZ films were synthesized by the on-axis RF magnetron sputtering technique. Extensive analyses of the structure and microstructure of films with different thickness reveals the existence of an Li-deficient phase, LiNb3O8, at the interface between the substrate and the film. The origin of the presence of this interface is discussed. as well as its consequences on the structural and morphologic properties of the epitaxial YSZ film. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：144 / 148
页数：5
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