Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

被引：7
|
作者：
Yao, Zongni [1 ]
Sun, Weijie [1 ]
Li, Wuxia [1 ]
Yang, Haifang [1 ]
Li, Junjie [1 ]
Gu, Changzhi [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2012年 / 98卷
基金：
中国国家自然科学基金;
关键词：
ZnO nanowire; Field-effect transistor; Dual gate; High-k dielectrics;
D O I：
10.1016/j.mee.2012.07.062
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dual gate ZnO nanowire field-effect transistor (FET) with high-k Al2O3 or HfO2 gate dielectrics was configured, which shows good transistor performance with a high on/off ratio (similar to 10(4)), a low operation voltage (below 1 V), a high peak transconductance (7.5 nS), a relatively high field effect mobility (0.27 cm(2)/V.s) and ultralow leakage current (similar to 10(-13)A). These results indicated that the ZnO nanowire FET in top-gate mode provided a better device performance than that in bottom-gate mode. Moreover, the effects of Al2O3 and HfO2 gate dielectric layers on enhancing the FET performance were discussed. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：343 / 346
页数：4
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