Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

被引：7

作者：

Yao, Zongni ^{[1
]}

Sun, Weijie ^{[1
]}

Li, Wuxia ^{[1
]}

Yang, Haifang ^{[1
]}

Li, Junjie ^{[1
]}

Gu, Changzhi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 98卷

基金：

中国国家自然科学基金;

关键词：

ZnO nanowire; Field-effect transistor; Dual gate; High-k dielectrics;

D O I：

10.1016/j.mee.2012.07.062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dual gate ZnO nanowire field-effect transistor (FET) with high-k Al2O3 or HfO2 gate dielectrics was configured, which shows good transistor performance with a high on/off ratio (similar to 10(4)), a low operation voltage (below 1 V), a high peak transconductance (7.5 nS), a relatively high field effect mobility (0.27 cm(2)/V.s) and ultralow leakage current (similar to 10(-13)A). These results indicated that the ZnO nanowire FET in top-gate mode provided a better device performance than that in bottom-gate mode. Moreover, the effects of Al2O3 and HfO2 gate dielectric layers on enhancing the FET performance were discussed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：343 / 346

页数：4