Ultrahigh Infrared Photoresponse in Titanium Sesquioxide at Mott-Insulator Transition

被引：11
作者：
Nandi, Sukanta [1 ]
Tripathi, Rahul [1 ]
Das Adhikary, Gobinda [2 ]
Kumar, Pramod [3 ]
Misra, Abha [1 ]
机构：
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
[3] Delhi Univ, Sri Aurobindo Coll, Dept Chem, New Delhi 110017, India
来源：
ADVANCED MATERIALS INTERFACES | 2020年 / 7卷 / 20期
关键词：
Mott-insulators; photoresponse; titanium sesquioxide (Ti2O3); GRAPHENE PHOTODETECTOR; CONDUCTION; PROPERTY; TI2O3; RAMAN;
D O I：
10.1002/admi.202001091
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An ultrahigh infrared (IR) photoresponse is reported in granular titanium sesquioxide (Ti2O3), also known as Mott insulator, at its semiconductor-metal transition temperature of 400 K. Ultrahigh photoresponse is obtained due to the IR radiation induced thermal expansion in Ti-Ti bonding causing a destabilization and depopulation of the band in its metallic state. Moreover, a high voltage responsivity of 1379 V W(-1)is achieved, which is significantly higher than any report so far. Both in situ Raman spectroscopy and X-ray diffraction measurements reveal an important insight beyond the semiconductor-metal transition in Ti2O3. Moreover, this study opens avenues to evaluate unprecedented properties of Mott insulators in their transition states.
引用
收藏
页数：7
相关论文
共 55 条
  • [1] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS
    AMBEGAOKAR, V
    HALPERIN, BI
    LANGER, JS
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08): : 2612 - +
  • [2] [Anonymous], 2010, INFRARED DETECTORS
  • [3] Inter-cluster distance dependence of electrical conduction in nanocluster assembled films of silver: a new paradigm for design of nanostructures
    Bansal, Chandrahas
    Praveen, S. G.
    Kumaran, J. T. T.
    Chatterjee, Ashok
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [4] SPECIFIC-HEAT OF SINGLE-CRYSTAL UNDOPED AND V-DOPED TI2O3
    BARROS, HL
    CHANDRASHEKHAR, GV
    CHI, TC
    HONIG, JM
    SLADEK, RJ
    [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5147 - 5152
  • [5] Effect of Magnetic Field on Photoresponse of Cobalt Integrated Zinc Oxide Nanorods
    Boruah, Buddha Deka
    Misra, Abha
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (07) : 4771 - 4780
  • [6] Regulating Infrared Photoresponses in Reduced Graphene Oxide Phototransistors by Defect and Atomic Structure Control
    Chang, Haixin
    Sun, Zhenhua
    Saito, Mitsuhiro
    Yuan, Qinghong
    Zhang, Han
    Li, Jinhua
    Wang, Zhongchang
    Fujita, Takeshi
    Ding, Feng
    Zheng, Zijian
    Yan, Feng
    Wu, Hongkai
    Chen, Mingwei
    Ikuhara, Yuichi
    [J]. ACS NANO, 2013, 7 (07) : 6310 - 6320
  • [7] ELASTIC-CONSTANTS AND ELECTRICAL TRANSITION IN TI2O3
    CHI, TC
    SLADEK, RJ
    [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5080 - 5085
  • [8] Chittick R. C., 1970, J NONCRYSTALL SOLIDS, V3, P255
  • [9] Chip-integrated ultrafast graphene photodetector with high responsivity
    Gan, Xuetao
    Shiue, Ren-Jye
    Gao, Yuanda
    Meric, Inanc
    Heinz, Tony F.
    Shepard, Kenneth
    Hone, James
    Assefa, Solomon
    Englund, Dirk
    [J]. NATURE PHOTONICS, 2013, 7 (11) : 883 - 887
  • [10] Efficient near-infrared light-emitting diodes based on quantum dots in layered perovskite
    Gao, Liang
    Quan, Li Na
    de Arquer, F. Pelayo Garcia
    Zhao, Yongbiao
    Munir, Rahim
    Proppe, Andrew
    Quintero-Bermudez, Rafael
    Zou, Chengqin
    Yang, Zhenyu
    Saidaminov, Makhsud I.
    Voznyy, Oleksandr
    Kinge, Sachin
    Lu, Zhenghong
    Kelley, Shana O.
    Amassian, Aram
    Tang, Jiang
    Sargent, Edward H.
    [J]. NATURE PHOTONICS, 2020, 14 (04) : 227 - +
123456