Ultrahigh Infrared Photoresponse in Titanium Sesquioxide at Mott-Insulator Transition

被引：11
作者：
Nandi, Sukanta [1 ]
Tripathi, Rahul [1 ]
Das Adhikary, Gobinda [2 ]
Kumar, Pramod [3 ]
Misra, Abha [1 ]
机构：
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
[3] Delhi Univ, Sri Aurobindo Coll, Dept Chem, New Delhi 110017, India
来源：
ADVANCED MATERIALS INTERFACES | 2020年 / 7卷 / 20期
关键词：
Mott-insulators; photoresponse; titanium sesquioxide (Ti2O3); GRAPHENE PHOTODETECTOR; CONDUCTION; PROPERTY; TI2O3; RAMAN;
D O I：
10.1002/admi.202001091
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An ultrahigh infrared (IR) photoresponse is reported in granular titanium sesquioxide (Ti2O3), also known as Mott insulator, at its semiconductor-metal transition temperature of 400 K. Ultrahigh photoresponse is obtained due to the IR radiation induced thermal expansion in Ti-Ti bonding causing a destabilization and depopulation of the band in its metallic state. Moreover, a high voltage responsivity of 1379 V W(-1)is achieved, which is significantly higher than any report so far. Both in situ Raman spectroscopy and X-ray diffraction measurements reveal an important insight beyond the semiconductor-metal transition in Ti2O3. Moreover, this study opens avenues to evaluate unprecedented properties of Mott insulators in their transition states.
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页数：7
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