Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells

被引：5

作者：

Liu, Guipeng ^{[1
]}

Wu, Ju ^{[1
]}

Lu, Yanwu ^{[2
]}

Zhao, Guijuan ^{[1
]}

Gu, Chengyan ^{[1
]}

Liu, Changbo ^{[1
]}

Sang, Ling ^{[1
]}

Yang, Shaoyan ^{[1
]}

Liu, Xianglin ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; dielectric polarisation; electron mobility; gallium compounds; III-V semiconductors; semiconductor quantum wells; two-dimensional electron gas; ALGAN/GAN HETEROSTRUCTURES; PIEZOELECTRIC POLARIZATION; MACROSCOPIC POLARIZATION; INTERFACE ROUGHNESS; HETEROJUNCTIONS; FIELD; INN; ALN;

D O I：

10.1063/1.4704142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate the electron mobility limited by the AlxGa1-xN barrier and the GaN well thickness fluctuations scattering of the two-dimensional electron gas (2DEG) at AlxGa1-xN/GaN multi-quantum wells (MQWs) with a triangle potential well. For this potential well, the ground subband energy is governed by the spontaneous and piezoelectric polarization fields and the fields are determined by the barrier and well thicknesses in undoped AlxGa1-xN/GaN MQWs. Thus, the thickness fluctuations of AlxGa1-xN barrier and GaN well will cause a local fluctuation of the ground subband energy, which will reduce the 2DEG mobility. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704142]

引用

页数：4

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