Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells

被引：5

作者：

Liu, Guipeng ^{[1
]}

Wu, Ju ^{[1
]}

Lu, Yanwu ^{[2
]}

Zhao, Guijuan ^{[1
]}

Gu, Chengyan ^{[1
]}

Liu, Changbo ^{[1
]}

Sang, Ling ^{[1
]}

Yang, Shaoyan ^{[1
]}

Liu, Xianglin ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; dielectric polarisation; electron mobility; gallium compounds; III-V semiconductors; semiconductor quantum wells; two-dimensional electron gas; ALGAN/GAN HETEROSTRUCTURES; PIEZOELECTRIC POLARIZATION; MACROSCOPIC POLARIZATION; INTERFACE ROUGHNESS; HETEROJUNCTIONS; FIELD; INN; ALN;

D O I：

10.1063/1.4704142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate the electron mobility limited by the AlxGa1-xN barrier and the GaN well thickness fluctuations scattering of the two-dimensional electron gas (2DEG) at AlxGa1-xN/GaN multi-quantum wells (MQWs) with a triangle potential well. For this potential well, the ground subband energy is governed by the spontaneous and piezoelectric polarization fields and the fields are determined by the barrier and well thicknesses in undoped AlxGa1-xN/GaN MQWs. Thus, the thickness fluctuations of AlxGa1-xN barrier and GaN well will cause a local fluctuation of the ground subband energy, which will reduce the 2DEG mobility. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704142]

引用

页数：4

共 50 条

[1] A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1-xN/GaN Heterostructure
Liu, Guipeng
Wu, Ju
Lu, Yanwu
Zhang, Biao
Li, Chengming
Sang, Ling
Song, Yafeng
Shi, Kai
Liu, Xianglin
Yang, Shaoyan
Zhu, Qinsheng
Wang, Zhanguo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) : 4272 - 4275
[2] Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1-xN barriers in AlxGa1-xN/GaN heterostructures
Wang, Yan
Shen, Bo
Xu, Fu-Jun
Huang, Sen
Miao, Zhen-Lin
Lin, Fang
Yang, Zhi-Jian
Zhang, Guo
CHINESE PHYSICS B, 2009, 18 (05) : 2002 - 2005
[3] Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures
Han, Xiuxun
Honda, Yoshio
Narita, Tetsuo
Yamaguchi, Masahito
Sawaki, Nobuhiko
Tanaka, Tooru
Guo, Qixin
Nishio, Mitsushiro
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (04)
[4] Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure
Wang Wei
Zhou Wen-Zheng
Wei Shang-Jiang
Li Xiao-Juan
Chang Zhi-Gang
Lin Tie
Shang Li-Yan
Han Kui
Duan Jun-Xi
Tang Ning
Shen Bo
Chu Jun-Hao
ACTA PHYSICA SINICA, 2012, 61 (23)
[5] POLARONIC EFFECTS IN WURTZITE GaN/AlxGa1-xN QUANTUM WELLS
Zhao, Feng-Qi
Zhang, Min
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (15): : 2105 - 2114
[6] Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well
Lu, J
Shen, B
Tang, N
Chen, DJ
Zheng, YD
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 1787 - 1790
[7] The effect of polaron in wurtzite GaN/AlxGa1-xN quantum well
Wurentuya
Duan, Xu-Lai
Zhao, Feng-Qi
Suriguga
Cailiao Kexue yu Gongyi/Material Science and Technology, 2012, 20 (02): : 133 - 139
[8] Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxial GaN/AlxGa1-xN ultraviolet-emitting quantum wells
Fuhrmann, D.
Retzlaff, T.
Greve, M.
Hoffmann, L.
Bremers, H.
Rossow, U.
Hangleiter, A.
Hinze, P.
Ade, G.
PHYSICAL REVIEW B, 2009, 79 (07)
[9] Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1-xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean
Richter, Steffen
Papamichail, Alexis
Kuehne, Philipp
Armakavicius, Nerijus
Guo, Shiqi
Persson, Axel R.
Stanishev, Vallery
Rindert, Viktor
Persson, Per O. A.
Paskov, Plamen P.
Schubert, Mathias
Darakchieva, Vanya
JOURNAL OF APPLIED PHYSICS, 2023, 134 (18)
[10] Abnormal Shubnikov-de Haas oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures in tilted magnetic fields
Tang, Ning
Shen, Bo
Han, Kui
Lu, Fang-Chao
Qin, Zhi-Xin
Zhang, Guo-Yi
PHYSICAL REVIEW B, 2009, 79 (07):

← 1 2 3 4 5 →