Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

被引：25

作者：

Liu, HY ^{[1
]}

Sellers, IR

Airey, RJ

Steer, MJ

Houston, PA

Mowbray, DJ

Cockburn, J

Skolnick, MS

Xu, B

Wang, ZG

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC, Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1481245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

引用

页码：3769 / 3771

页数：3

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