Investigation of electrical parameters of Au/P3HT:PCBM/n-6H-SiC/Ag Schottky barrier diode with different current conduction models

被引：9

作者：

Altan, Hayati ^{[1
]}

Ozer, Metin ^{[1
]}

Ezgin, Huseyin ^{[2
]}

机构：

[1] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey

[2] Gazi Univ, Dept Adv Technol, TR-06500 Ankara, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 146卷

关键词：

Schottky barrier diode; n-6H-SiC; P3HT:PCBM; Gaussian distribution; Effective Richardson constant; Inhomogeneous barrier height; CURRENT-VOLTAGE-TEMPERATURE; CAPACITANCE-VOLTAGE; SERIES RESISTANCE; TRANSPORT; INHOMOGENEITIES; HEIGHT; DEPENDENCE; CONTACTS; LAYER; PLOT;

D O I：

10.1016/j.spmi.2020.106658

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have researched the electrical characteristics of Au/P3HT:PCBM/n-6H-SiC/Ag Schottky barrier diode (SBD) fabricated with a polymer interface layer between 300 and 375 K temperatures. The experimentally obtained parameters from current-voltage (I-V) measurements are calculated with four different current conduction models. It is observed that parameters calculated from research findings related to different methods are compatible with each other. The barrier inhomogeneity of the metal-polymer-semiconductor (MPS) interface layer is explained by Gaussian distribution (GD). Furthermore, the mean barrier height ((Phi) over bar (bo)) and the modified effective Richardson constant (A**) are found by drawing Richardson curves of the sample. Finally, the electrical properties of Au/P3HT:PCBM/n-6H-SiC/Ag SBD have been determined to affect the interface materials and the interface state density (N-ss) as well as the current conduction models.

引用

页数：10

共 51 条

[1]

Abderrazak H, 2011, PROPERTIES AND APPLICATIONS OF SILICON CARBIDE, P361

[2]

Alialy S., 2013, J NANOMED NANOTECHOL, V4, P1, DOI 10.4172/2157-7439.1000167

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