Exchange coupling of (Mn-Ir,Fe-Mn)/Ni-Fe-Co and Ni-Fe-Co/(Mn-Ir,Fe-Mn) films formed by ion beam sputtering

被引:10
|
作者
Nakatani, R
Hoshiya, H
Hoshino, K
Sugita, Y
机构
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji
[2] Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai , Miyagi 980-77, 2-1-1, Katahira
关键词
D O I
10.1109/20.619537
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated exchange couplings between magnetic layers and antiferromagnetic layers in (Mn-Ir, Fe-Mn)/Ni-Fe-Co and Ni-Fe-Co/(Mn-Ir, Fe-Mn) films formed by ion beam sputtering. We changed a stacking order between the magnetic layers and antiferromagnetic layers, and the thickness of the antiferromagnetic layers. In both the Fe-Mn/Ni-Fe-Co and the Ni-Fe-Co/Fe-Mn films, high exchange bias fields applied to the Ni-Fe-Co layers were observed, when the thickness of the Fe-Mn layer was 10-20 nm. When the Mn-Ir layers were formed on the Ni-Fe layers, the high exchange bias fields were also observed. However, the exchange bias fields were very low when the Mn-Ir layers were formed under the Ni-Fe layers. The decrease of the exchange bias field was caused by the deterioration of the (111) texture near the top surface which faces the Ni-Fe layer in the Mn-Ir layer.
引用
收藏
页码:3682 / 3684
页数:3
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