Plasma-Induced Interfacial Layer Impacts on TFETs With Poly-Si Channel Film by Oxygen Plasma Surface Treatment

被引：6

作者：

Ma, William Cheng-Yu ^{[1
]}

Chang, Kang ^{[1
]}

Lin, Yu-Cheng ^{[1
]}

Wu, Tai-Hsuan ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2016年 / 44卷 / 12期

关键词：

Oxygen plasma; short-channel effects (SCEs); thin-film transistors (TFTs); tunnel field-effect transistors (TFETs); FIELD-EFFECT TRANSISTORS; CMOS LTPS-TFTS; TUNNEL; BEHAVIOR;

D O I：

10.1109/TPS.2016.2621056

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

In this paper, tunnel field-effect transistor (TFETs) with polycrystalline-silicon (poly-Si) channel film has been demonstrated to exhibit better short-channel effects (SCEs) immunity than conventional poly-Si thin-film transistors. Oxygen (O-2) plasma surface treatment before the deposition of gate dielectric can produce a plasma-induced interfacial layer, which can passivate the interface trap state density similar to 25%. In addition, the ON-state transconductance Gm is improved similar to 54% due to the decrease of tunneling distance of band-to-band tunneling. However, the Gm improvement of poly-Si TFETs is decreased with the scaling down of channel length due to the less trap state density in the small area of poly-Si channel film. Moreover, the O2 plasma surface treatment can also reduce the grain boundary trap state density of poly-Si channel film similar to 37%, which can reduce the trap-assisted tunneling current of poly-Si TFETs to suppress the length dependence of drain leakage current in the subthreshold region. Consequently, the O-2 plasma surface treatment can not only improve the ON-state current and OFF-state leakage current of poly-Si TFETs, but also further improve the SCEs of poly-Si TFETs.

引用

页码：3214 / 3218

页数：5

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