Coupling of Epsilon-Near-Zero Mode to Gap Plasmon Mode for Flat-Top Wideband Perfect Light Absorption

被引:90
作者
Hendrickson, Joshua R. [1 ]
Vangala, Shivashankar [1 ,2 ]
Dass, Chandriker [1 ,3 ]
Gibson, Ricky [1 ,4 ]
Goldsmith, John [1 ,3 ]
Leedy, Kevin [1 ]
Walker, Dennis E., Jr. [1 ]
Cleary, Justin W. [1 ]
Kim, Wonkyu [5 ]
Guo, Junpeng [5 ]
机构
[1] US Air Force, Res Lab, Sensors Directorate, Dayton, OH 45433 USA
[2] Azimuth Corp, Dayton, OH 45431 USA
[3] KBRwyle Labs Inc, Dayton, OH 45431 USA
[4] Univ Dayton, Res Inst, Dayton, OH 45469 USA
[5] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
基金
美国国家科学基金会;
关键词
epsilon-near-zero; perfect light absorption; plasmonics; metasurface; light matter coupling; METAMATERIALS;
D O I
10.1021/acsphotonics.7b01491
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Epsilon-near-zero (ENZ) materials, when probed at or near wavelengths corresponding to their zero permittivity crossing points, have unique and interesting properties that can be exploited for enhancing nanoscale light matter interactions. Here, we experimentally show that over an order of magnitude increase in the absorption band of a periodically patterned metal-dielectric-metal structure can be obtained by integrating an indium tin oxide (ITO) subwavelength nanolayer into the insulating dielectric gap region. Through incorporation of a 12 nm thick ITO layer between the patterned gold nanodisks and the SiO2 dielectric layer, a 240 rim wide, flat-top perfect (>98%) absorption centered at 1550 nm wavelength is enabled. The demonstrated wideband, perfect absorption resonance is shown to be due to coupling between the gap plasmon mode of the metasurface and the ENZ mode in the nanoscale ITO film.
引用
收藏
页码:776 / 781
页数:11
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