Current-induced zero-field domain wall depinning in cylindrical nanowires

Multi-segmented cylindrical nanowires have properties that make them attractive for high-density, high-speed logic and memory applications. Investigations of the current-induced domain wall motion in cylindrical nanowires have, so far, typically been conducted with a background magnetic field. However, if performed at zero external field, they would be much more viable for their use in prospective electronic devices. Here, we present an all-magneto electrical method to consistently pin domain walls in multi-segmented nanowires and induce their de-pinning using current pulses. The experiments were conducted with compositionally modulated three-segmented nickel/cobalt/nickel and two-segmented cobalt/nickel nanowires of 190 and 150 nm diameter, respectively, where the soft/hard magnetic texture has been fairly studied. We find that for the 3 segmented nanowire, the domain wall can be de-pinned independent of the polarity of the pulse, while for the 2 segmented nanowire the domain wall de-pins only for one polarity. Applying current pulses of 1 x 10(12) A/m(2), we use a pulse width of 22 ns to estimate a lower boundary for the domain wall speed of 634.54 m/s in cobalt. We study the resistive heating effect from the DC measurement current to find a temperature increase of no more than 2 degrees C after more than 20 h of tests.