Calculation of Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Particle Size Dispersion

被引：2

作者：

Useinov, Arthur ^{[1
,2
,3
]}

Ye, Lin-Xiu ^{[2
]}

Yang, Chun-Liang ^{[2
]}

Useinov, Niazbeck ^{[3
]}

Lin, Hsiu-Hau ^{[1
]}

Lai, Chih-Huang ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Kazan Fed Univ, Inst Phys, Kazan 420000, Russia

来源：

IEEE MAGNETICS LETTERS | 2016年 / 7卷

关键词：

Spin electronics; magnetic tunnel junctions; nanoparticles; tunnel magnetoresistance; conductance quantization;

D O I：

10.1109/LMAG.2016.2614801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simulation results are given for electron tunneling through the insulating layer of a magnetic tunnel junction with embedded nonmagnetic nanoparticles (NPs). The size dispersion of the NPs was an important part of the solution for tunnel magnetoresistance, which was calculated on the basis of the double-barrier model. Theoretical agreement with experimental data was achieved by adjusting the NP dispersion and quantization. A step-like quantization related to the initial distribution of the electrons over quantum-well states was considered for different size NPs.

引用

页数：3

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