Ferroelectric properties of PZT/TiO2 structure according to the deposition condition of TiO2 interlayer

PZT thin films on the interlayer (TiO 2 ) and Si substrate were fabricated by the r.f. magnetron-sputtering method. As a result of the EPMA analysis, we can conclude that the TiO 2 thin film decrease Pb volatilization. TiO 2 interlayer and PZT thin film were investigated by interface analysis of Glow Discharge Spectrometer (GDS) and observed to be independent layers respectively. Interlayer (TiO 2 ) between PZT and Pt affected as seed layer of thin film and decreased crystallization temperature. Compared to the PZT thin films with TiO 2 interlayer without post-annealing, the films with TiO 2 interlayer annealed by RTA furnace showed prevailing ferroelectric properties.