The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers

被引：0

作者：

Al-Ghamdi, M. S. ^{[1
]}

Smowton, P. M. ^{[2
]}

Krysa, A. B. ^{[3
]}

机构：

[1] King Abdulaziz Univ, Dept Phys, Fac Sci, POB 80203, Jeddah 21589, Saudi Arabia

[2] Cardiff Univ, Sch Phys & Astron, Cardiff, Wales

[3] Univ Sheffield, EPSRC Natl Ctr Technol 3, Sheffield, S Yorkshire, England

来源：

2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2012年

关键词：

INAS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure optical gain and absorption spectra for structures with different p-doping level. Results show an increase in maximum modal gain at fixed quasi-Fermi level separation and high defect number in the high p-doped structure.

引用

页码：80 / +

页数：2

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