Dynamics of the Si(100) surface

被引：11

作者：

Gavioli, L

Betti, MG

Mariani, C

Shkrebtii, AI

DelSole, R

Cepek, C

Goldoni, A

Modesti, S

机构：

[1] UNIV ROMA TOR VERGATA, DIPARTIMENTO FIS, IST NAZL FIS MAT, I-00133 ROME, ITALY

[2] IST NAZL FIS MAT, TASC, I-34012 TRIESTE, ITALY

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

dimer motion; electronic structure; surface dynamics; surface metallization;

D O I：

10.1016/S0039-6028(96)01418-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Si(100) surface is constituted by asymmetric dimers and presents complex dynamical behaviour. To understand the influence of dimer motion on the surface electronic properties, we investigate the dynamics of the Si(100) surface experimentally and theoretically in a wide temperature range (150-00K). High-resolution electron energy-loss spectroscopy measurements are compared to a microscopic tight-binding calculation of the dielectric function. An instantaneous symmetric-like nat dimer configuration due to fast dimer-flipping is responsible for the electronic transition at 0.8 eV and for the surface metallization observed at 900 K,well below the suggested incomplete melting temperature (1400 K).

引用

页码：360 / 364

页数：5

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