Investigation of plasma-doped fin structure and characterization of dopants by atom probe tomography

被引：4

作者：

Kim, B. H. ^{[1
]}

Park, S. M. ^{[1
]}

Park, S. W. ^{[2
]}

Park, Y. B. ^{[2
]}

Kim, H. J. ^{[2
]}

Park, C. G. ^{[1
,3
]}

机构：

[1] POSTECH, Dept Mat Sci & Engn, Pohang, South Korea

[2] SK Hynix, Div Res & Dev, Ichon Si, Gyeonggi Do, South Korea

[3] Natl Ctr Nanomat Technol NCNT, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

关键词：

FEMTOSECOND LASER; RECONSTRUCTION;

D O I：

10.1063/1.4766440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As and P dopants in a plasma-doped Si-based fin structure were analyzed using atom probe tomography. The distributions and concentrations of As and P atoms in various regions of the fin structure and the oxidation levels for different dopants were determined. Most dopants were segregated at the fin boundary, and the As and P concentrations exceeded 9 x 10(20) atoms/cm(3) and 2 x 10(20) atoms/cm(3), respectively. The atomic oxygen and SiO2 concentrations depended on the dopant type. The larger and heavier As dopant severely damaged the surface of the fin structure and could cause more severe oxidation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766440]

引用

页数：5

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