YAG:V3+ single crystals growth and their selected properties

被引：13

作者：

Frukacz, Z ^{[1
]}

Mierczyk, Z ^{[1
]}

Pawlak, DA ^{[1
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

SINGLE CRYSTAL GROWTH, CHARACTERIZATION, AND APPLICATIONS | 1999年 / 3724卷

关键词：

crystal growth; non-linear absorption; bleaching effect; saturable absorber; giant-pulse generation;

D O I：

10.1117/12.343018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we present results on YAG:V3+ single crystal growth and examination for the purposes of Q-switching of laser resonator in the near IR band. A numbers of YAG single crystals doped with different concentrations of V3+ ions were obtained by the Czochralski method. The absorption and emission spectra measurements on those crystals are presented. After crystal growth only a small part of vanadium atoms is introduced into a crystal structure as V3+ ions in tetrahedral positions, the other ones are at different positions or at higher charge states V4+ and VH. Receiving of vanadium ions of V3+ valency in the desired points of YAG structure can be possible as a result of complex reactions in solid-state phase. Such reactions proceed during the process of a multi-stage crystal annealing in reducing atmosphere and in vacuum. The as grown crystals have not non-linear absorption bands of V3+ ions in tetrahedral positions (820 mn, 1100 nm and 1300 nm). After annealing of the crystals in reducing atmosphere the absorption bands, described above, arise. The investigations of changes in transmission properties of YAG crystals with different concentrations of V3+ ions have been carried out as a function of power density of transmitted radiation at 822 Mi (Ti:Sapphire laser) and 1064 nn (YAG:Nd3+ laser).

引用

页码：329 / 333

页数：5

共 12 条

[1]

[Anonymous], 1993, Z13611993 ANSI

[2] OPTIMIZATION OF PASSIVELY Q-SWITCHED LASERS [J].