Engineering SOI Substrates for RF to mmWave Front-Ends

被引：0

作者：

Allibert, F. ^{[1
]}

Andia, L. ^{[1
]}

Morandini, Y. ^{[1
]}

Veytizou, C. ^{[1
]}

Rack, M. ^{[2
]}

Nyssens, L. ^{[2
]}

Raskin, J. P. ^{[2
]}

Augendre, E. ^{[3
,4
]}

机构：

[1] Soitec, Bernin, France

[2] Catholic Univ Louvain, ICTEAM, Louvain La Neuve, Belgium

[3] CEA, LETI, Grenoble, France

[4] Univ Alpes Grenoble, Grenoble, France

来源：

MICROWAVE JOURNAL | 2020年 / 63卷 / 10期

关键词：

Millimeter waves;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article illustrates how substrate engineering brings additional linearity and value for RF and mm-wave applications. Measurement setup and extraction procedures enable evaluating the substrate performance through representative metrics. With a physical understanding of material properties, the EM behavior of the substrates can be accurately modeled, reproducing the effects of material parameters on HD.

引用

页码：72 / 84

页数：13

共 13 条

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