Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

被引：9

作者：

Alexewicz, A. ^{[1
]}

Alomari, M. ^{[2
]}

Maier, D. ^{[2
]}

Behmenburg, H. ^{[3
,4
]}

Giesen, C. ^{[3
]}

Heuken, M. ^{[3
,4
]}

Pogany, D. ^{[1
]}

Kohn, E. ^{[2
]}

Strasser, G. ^{[1
]}

机构：

[1] TU Wien, A-1040 Vienna, Austria

[2] Univ Ulm, D-89081 Ulm, Germany

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

[4] Rhein Westfal TH Aachen, D-52074 Aachen, Germany

来源：

SOLID-STATE ELECTRONICS | 2013年 / 89卷

关键词：

Surface passivation; In situ SiN; High electron mobility transistor (HEMT); InAlGaN/GaN heterostructure; SILICON-NITRIDE; ALGAN/GAN; PERFORMANCE; DEPOSITION; PLASMA; IMPACT; STATES; SI3N4;

D O I：

10.1016/j.sse.2013.09.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of surface treatment of 5 nm in situ SiN passivation on the performance of InAlGaN/GaN high electron mobility transistors is analyzed. After operation at 600 degrees C, no device degradation is observed, confirming the thermal stability of the passivation layer. The in situ SiN, grown by metalorganic chemical vapor deposition, is treated by first Ar ion sputter cleaning, intentional oxidation in water and second cleaning. The results of current collapse characterization show that the SiN surface contains a humidity related trap density of about 1.04 x 10(12) cm(-2), which can be reduced to 0.21 x 10(12) cm(-2) by Ar sputter cleaning. The surface. cleaning allows for deposition of further layers without degradation of the device properties. In this study, 25 nm SiN is deposited subsequently by conventional plasma enhanced chemical vapor deposition, resulting in the same device performance as the devices processed with 30 nm in situ SiN. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：207 / 211

页数：5

共 33 条

[1] Evaluation of effective electron velocity in AlGaN/GaN HEMTs [J].

Akita, M ;

Kishimoto, S ;

Maezawa, K ;

Mizutani, T .

ELECTRONICS LETTERS, 2000, 36 (20) :1736-1737

[2] Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Sano, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :613-615

[3] In situ SiN passivation of AlInN/GaN heterostructures by MOVPE [J].

Behmenburg, H. ;

Khoshroo, L. Rahimzadeh ;

Mauder, C. ;

Ketteniss, N. ;

Lee, K. H. ;

Eickelkamp, M. ;

Brast, M. ;

Fahle, D. ;

Woitok, J. F. ;

Vescan, A. ;

Kalisch, H. ;

Heuken, M. ;

Jansen, R. H. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[4] Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors [J].

Benoit, D. ;

Regolini, J. ;

Morin, P. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2169-2172

[5] Current instabilities in GaN-based devices [J].

Daumiller, I ;

Theron, D ;

Gaquière, C ;

Vescan, A ;

Dietrich, R ;

Wieszt, A ;

Leier, H ;

Vetury, R ;

Mishra, UK ;

Smorchkova, IP ;

Keller, S ;

Nguyen, NX ;

Nguyen, C ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :62-64

[6] Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer -: art. no. 054501 [J].

Derluyn, J ;

Boeykens, S ;

Cheng, K ;

Vandersmissen, R ;

Das, J ;

Ruythooren, W ;

Degroote, S ;

Leys, MR ;

Germain, M ;

Borghs, G .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[7]

Derluyn J., 2009, IEDM, P1, DOI DOI 10.1109/IEDM.2009.5424399

[8] Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs [J].

Desmaris, V. ;

Shiu, J. Y. ;

Rorsman, N. ;

Zirath, H. ;

Chang, E. Y. .

SOLID-STATE ELECTRONICS, 2008, 52 (05) :632-636

[9]

Fontsere A., 2012, ESSDERC 2012 - 42nd European Solid State Device Research Conference, P306, DOI 10.1109/ESSDERC.2012.6343394

[10] Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs [J].

Gao, Feng ;

Chen, Di ;

Lu, Bin ;

Tuller, Harry L. ;

Thompson, Carl V. ;

Keller, Stacia ;

Mishra, Umesh K. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) :1378-1380

← 1 2 3 4 →