Studies in CuInS2 based solar cells, including ZnS and In2S3 buffer layers

被引：13

作者：

Calderon, C. ^{[1
]}

Oyola, J. S. ^{[1
]}

Bartolo-Perez, P. ^{[2
]}

Gordillo, G. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Dept Fis, Cra 30 45-03, Bogota, Colombia

[2] CINVESTAV IPN, Dept Fis Aplicada, Merida, Yucatan, Mexico

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期

关键词：

CuInS2; Thin films; Solar cells; XPS analysis; AES depth profile; SPRAY-PYROLYSIS; THIN-FILMS;

D O I：

10.1016/j.mssp.2013.06.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the growth conditions on the surface chemistry and on the homogeneity of the chemical composition of CuInS2 (CIS) thin films, prepared by sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process, was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). It was found that the growth temperature affects the phase in which this compound grows. The samples deposited at temperatures around 500 degrees C (2nd stage) contain mainly the CuInS2 phase; however, secondary phases like In2S3, Cu2S were additionally identified at the surface and in the bulk of CuInS2 samples deposited at temperatures greater than 550 degrees C. Also, the elemental composition of the layers constituting the Glass/Mo/CuInS2/buffer/ZnO structure was studied through Auger electron spectroscopy (AES) depth profile measurements. AES measurements carried out across the Glass/Mo/CuInS2/buffer/ZnO heterojunction gave evidence of Cu diffusion from the CuInS2 layer towards the rest of the layers constituting the device, and of the formation of a MoS2 layer in the Mo/CuInS2 interface. The performance of CuInS2-based solar cells fabricated using CBD (chemical bath deposition) deposited ZnS as buffer layer was compared to that of cells fabricated using CBD deposited In2S3 as buffer. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1382 / 1387

页数：6

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