Germanium effect on oxygen-related defects in Czochralski silicon

被引：9
|
作者：
Yang, DR [1 ]
Chen, JH [1 ]
Li, H [1 ]
Ma, XY [1 ]
Tian, DX [1 ]
Li, LB [1 ]
Que, DL [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 04期
关键词：
D O I：
10.1002/pssa.200564507
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium-doped CZ (GCZ) silicon is presented. The formation of oxygen precipitates during CZ silicon growth can be improved by germanium, and the oxygen precipitation during thermal cycles can be enhanced, so that the internal gettering (IG) ability of GCZ silicon wafers for metallic impurities is improved. Meanwhile, the morphology of oxygen precipitates can be changed in GCZ silicon. Thermal donors (TDs) can be suppressed by germanium doping as the result of the reaction between germanium and point defects, while new donors (NDs) can be strongly enhanced in GCZ silicon because of a process associated with the nucleation enhancement of oxygen precipitates with germanium doping. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：685 / 695
页数：11
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