Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

被引：73

作者：

Walser, M. P. ^{[1
]}

Kalb, W. L. ^{[1
]}

Mathis, T. ^{[1
]}

Brenner, T. J. ^{[1
]}

Batlogg, B. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

logic gates; organic field effect transistors; organic semiconductors; polymers; thin film transistors; INSULATORS; VOLTAGE;

D O I：

10.1063/1.3077192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results on small-molecule p- and n-type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop (TM) as the gate dielectric. Using pentacene and N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C-13), we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p- and n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility (similar to 0.2 cm(2)/V s). Particularly PTCDI-C-13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.

引用

页数：3