The effects of substrate temperature on properties of B and Ga co-doped ZnO thin films grown by RF magnetron sputtering

被引：33

作者：

Zhang, Lei ^{[1
]}

Huang, Jian ^{[1
]}

Yang, Jin ^{[1
]}

Tang, Ke ^{[1
]}

Ren, Bing ^{[1
]}

Zhang, Shuwei ^{[1
]}

Wang, Linjun ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2016年 / 307卷

基金：

中国国家自然科学基金;

关键词：

B and Ga co-doped ZnO; Sputtering; Substrate temperature; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; BORON; FABRICATION; DEPOSITION; NETWORKS; CRYSTALLINITY;

D O I：

10.1016/j.surfcoat.2016.03.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, B and Ga co-doped ZnO (BGZO) films were fabricated by RF magnetron sputtering method. The effects of substrate temperature on the electrical, optical, structural and morphological properties of B and Ga co-doped ZnO films were investigated. XRD results revealed that deposited films were textured along c-axis and maintain wurtzite crystalline symmetry. As substrate temperature increased up to 200 degrees C, the film crystallinity was improved and the crystallite sizes became larger. At the substrate temperature of 200 degrees C, the films showed lower resistivity, higher Flail mobility and higher optical band gap. It was also observed that all films showed high transparency in the visible range (400-800 nm), which did not change obviously with the substrate temperature. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1129 / 1133

页数：5

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