Fabrication of short wavelength infrared InGaAs/InP photovoltaic detector series

Using homo-junction structure and relative thin linear graded InxGa1-x. As as the buffer layer, extended wavelength InGaAs/InP photo detector series with cut-off wavelength of about 1.9, 2.2 and 2.5 mu m at room temperature were grown by using GSMBE, and their performances over a wide temperature range were extensively investigated. Results show that at room temperature their R(0)A products are 765, 10.3 and 12.7 Omega cm(2) respectively. Cooling down 100 K from room temperature, about three orders of improvement could be obtained for the dark current and R(0)A product. Transient measurements show that those detectors are quite suitable for high speed applications, and their response speed is scores of ps.