Experimental results on the high-pressure phase diagram of boron nitride

被引：4

作者：

Fukunaga, Osamu ^{[1
]}

Nakano, Satoshi ^{[2
]}

Taniguchi, Takashi ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Inorgan Mat, 2-12-1 Ookayama, Meguro, Tokyo 1528550, Japan

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 12期

关键词：

boron nitride; high-pressure; high-temperature; phase diagram; phase boundary; AB-INITIO CALCULATION; HIGH-TEMPERATURE; CUBIC BN; GROWTH; NUCLEATION; BOUNDARY; DIAMOND; MG3N2;

D O I：

10.35848/1347-4065/ac9dd5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the boron nitride (BN) phase diagram at 3-6 GPa and 1100 degrees C-2200 degrees C using a modified belt-type high-pressure apparatus. The cubic BN (cBN)-hexagonal BN (hBN) phase boundary was determined using the hBN-Mg3BN3 catalyst system as a starting material at 4-5.5 GPa. Additional experiments were conducted at 3-4 and 4-6 GPa using cBN powder or hBN-Ca3B2N4 catalyst as a starting material. In the hBN-catalyst system, the rate of cBN nucleation was reduced by the growth of metastable hBN crystals under the cBN-stable pressure-temperature conditions. The stable BN phases were identified from the samples reacted with a longer run duration. The phase boundary line between hBN and cBN was determined as the equation P (GPa) = T (degrees C)/400 + 0.3, which agreed with the boundary lines calculated by Gruber and Gruneis and by Nikaido et al.

引用

页数：5

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