Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

被引：11

作者：

Levichev, S. ^{[1
]}

Chahboun, A. ^{[2
]}

Basa, P. ^{[3
]}

Rolo, A. G. ^{[1
]}

Barradas, N. P. ^{[4
]}

Alves, E. ^{[4
]}

Horvath, Zs J. ^{[3
]}

Conde, O. ^{[5
]}

Gomes, M. J. M. ^{[1
]}

机构：

[1] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[2] FSDM, Dept Phys, LPS, Fes, Morocco

[3] Hungarian Acad Sci, RITPMS, H-1525 Budapest, Hungary

[4] ITN, P-2686953 Sacavem, Portugal

[5] Univ Lisbon, Dept Phys, P-1749016 Lisbon, Portugal

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期

基金：

匈牙利科学研究基金会;

关键词：

CdSe; Nanocrystals; SiO2; Charging effect;

D O I：

10.1016/j.mee.2008.09.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2374 / 2377

页数：4

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