Carrier-enhanced ferromagnetism in Ge1-xMnxTe

被引：53

作者：

Fukuma, Y ^{[1
]}

Asada, H ^{[1
]}

Arifuku, M ^{[1
]}

Koyanagi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Dept Symbiot Environm Syst Engn, Ube, Yamaguchi 7558611, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1445477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the dependence of magnetic properties on the carrier concentration of IV-VI diluted magnetic semiconductor Ge1-xMnxTe prepared by ionized-cluster beam technique. With increasing carrier concentration, the magnetic properties drastically change; saturation magnetization increases and coercive field decreases in hysteresis loop, and the Curie temperature increases. These results obviously show carrier-enhanced ferromagnetic order. The similar effect is also observed in magnetoresistance behavior. (C) 2002 American Institute of Physics.

引用

页码：1013 / 1015

页数：3

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