Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

被引：2

作者：

Yamaguchi, Yutaro ^{[1
]}

Sagai, Takeshi ^{[1
]}

Miyamoto, Yasuyuki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2012年 / E95C卷 / 08期

基金：

日本学术振兴会;

关键词：

heterojunction bipolar transistor; InP; base-collector capacitance; transferred-substrate; heterogeneous integration; HETEROJUNCTION BIPOLAR-TRANSISTORS; BASE; F(T); HBTS; GHZ;

D O I：

10.1587/transele.E95.C.1323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/mu m(2) were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after deembedding, a cutoff frequency (f(T)) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed f(T) was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.

引用

页码：1323 / 1326

页数：4

共 11 条

[1] Wideband DHBTs using a graded carbon-doped InGaAS base
Dahlström, M
Fang, XM
Lubyshev, D
Urteaga, M
Krishnan, S
Parthasarathy, N
Kim, YM
Wu, Y
Fastenau, JM
Liu, WK
Rodwell, MJW
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 433 - 435
[2] Submicron InP-InGaAs single he-terojunction bipolar transistors with fT of 377 GHz
Hafez, W
Lai, JW
Feng, M
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) : 292 - 294
[3] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
Ida, M
Kurishima, K
Watanabe, N
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) : 694 - 696
[4] KOOLEN MCAM, 1991, PROCEEDINGS OF THE 1991 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, P188, DOI 10.1109/BIPOL.1991.160985
[5] Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology
Kraemer, Tomas
Meliani, Chafik
Schmueckle, Franz Josef
Wuerfl, Joachim
Traenkle, Guenther
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (09) : 2114 - 2121
[6] Miyamoto Y, 2010, IEICE T ELECTRON, VE93C, P644, DOI [10.1587/transele.E93.C.644, 10.1587/transele.E93.C644]
[7] Raman S., 2010, 22 IND PHOSPH REL MA
[8] A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)
Rios, JMM
Lunardi, LM
Chandrasekhar, S
Miyamoto, Y
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (01) : 39 - 45
[9] Submicron scaling of HBTs
Rodwell, MJW
Urteaga, M
Mathew, T
Scott, D
Mensa, D
Lee, Q
Guthrie, J
Betser, Y
Martin, SC
Smith, RP
Jaganathan, S
Krishnan, S
Long, SI
Pullela, R
Agarwal, B
Bhattacharya, U
Samoska, L
Dahlstrom, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (11) : 2606 - 2624
[10] Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with High Current Density
Saito, Hisashi
Matsumoto, Yutaka
Miyamoto, Yasuyuki
Furuya, Kazuhito
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)

← 1 2 →