Strong correlations at topological insulator surfaces and the breakdown of the bulk-boundary correspondence

被引:7
作者
Schmidt, Manuel J. [1 ]
机构
[1] Rhein Westfal TH Aachen, Inst Theoret Festkorperphys, D-52056 Aachen, Germany
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 16期
关键词
D O I
10.1103/PhysRevB.86.161110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The criteria for strong correlations on surfaces of three-dimensional topological insulators are discussed. Usually, the Coulomb repulsion at such surfaces is too weak for driving a phase transition to a strongly correlated regime. I discuss a mechanism and possibilities of its experimental implementation by which the strength of the Coulomb interaction may be tuned over a wide range. In the strongly interacting regime, the surface states are gapped, even though the topological classification of the bulk band structure predicts gapless surface states.
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页数:4
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