Ionic Polarization Occurrence in BaSrTiO3 Thin Film by THz-Time Domain Spectroscopy

被引：4

作者：

Houzet, G. ^{[2
]}

Blary, K. ^{[2
]}

Lepilliet, S. ^{[2
]}

Lippens, D. ^{[2
]}

Burgnies, L. ^{[2
]}

Velu, G. ^{[3
]}

Carru, J. C. ^{[3
]}

Nguema, E. ^{[1
]}

Mounaix, P. ^{[1
]}

机构：

[1] Univ Bordeaux 1, CNRS, UMR 5798, LOMA, F-33405 Talence, France

[2] Univ Lille 1, CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

[3] Univ Littoral Cote dOpale, EA 4476, UDSMM, Calais, France

来源：

FERROELECTRICS | 2012年 / 430卷

关键词：

Thin films; BaSrTiO3; complex permittivity; terahertz; microwave; DIELECTRIC RESPONSE; FREQUENCY; FERROELECTRICS;

D O I：

10.1080/00150193.2012.677682

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaSrTiO3 thin films in a paraelectric phase were characterized on the one hand from 1 GHz to 200 GHz by microwave measurements on interdigitated capacitance and coplanar waveguides and on the other hand up to 3 THz by Time Domain Spectroscopy. An overlap of the polar nanoregion relaxation mechanism with a characteristic frequency around 800 GHz and of the ionic polarization with a relaxation frequency around 3 THz is directly evidenced experimentally.

引用

页码：36 / 41

页数：6

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