X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching

被引：7

作者：

Dmitruk, I ^{[1
]}

Dmitruk, N

Domagala, J

Klinger, D

Zymierska, D

Auleytner, J

机构：

[1] Kyiv Taras Shevchenko Univ, Kyiv, Ukraine

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, Kyiv, Ukraine

[3] Polish Acad Sci, Inst Phys, Warsaw, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1999年 / 286卷 / 1-2期

关键词：

structure perfection; surface treatment; microrelief; light scattering; GaAs; specular reflection;

D O I：

10.1016/S0925-8388(98)01023-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Microrelief was developed on the surface of high quality GaAs single crystals by means of wet anisotropic etching. The surface relief characteristics and structure perfection of subsurface layer were studied by profilometric, optical reflection, Raman scattering, X-ray, and reflection high-energy electron diffraction methods. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：289 / 296

页数：8

共 7 条

[1]

Beckmann P, 1987, The scattering of electromagnetic waves from rough surfaces

[2] OPTICAL-PROPERTIES AND PHOTOEMISSION OF MICRORELIEF SURFACES OF III-V SEMICONDUCTORS [J].