Spin Dynamics and Relaxation in Graphene Nanoribbons: Electron Spin Resonance Probing

被引:35
|
作者
Rao, Singamaneni S. [1 ]
Stesmans, Andre [1 ]
van Tol, Johan [2 ]
Kosynkin, Dmitry V. [3 ]
Higginbotham-Duque, A. [3 ]
Lu, Wei [3 ]
Sinitskii, Alexander [3 ]
Tour, James. M. [3 ,4 ,5 ]
机构
[1] Katholieke Univ Leuven, Semicond Phys Lab, Inst Nanoscale Phys & Chem, INPAC, B-3001 Louvain, Belgium
[2] Florida State Univ, Ctr Interdisciplinary Magnet Resonance, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[3] Rice Univ, Dept Chem, Houston, TX 77005 USA
[4] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA
[5] Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
关键词
electron spin relaxation rate; graphene nanoribbons; tunneling level states; electron spin resonance; edge spin; LATTICE-RELAXATION; CARBON NANOTUBES;
D O I
10.1021/nn302745x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here we report the results of a multifrequency (similar to 9, 20, 34, 239.2, and 336 GHz) variable-temperature continuous wave (cw) and X-band (similar to 9 GHz) pulse electron spin resonance (ESR) measurement performed at cryogenic temperatures on potassium split graphene nanoribbons (GNRs). Important experimental findings include the following: (a) The multifrequency cw ESR data infer the presence of only carbon-related paramagnetic nonbonding states, at any measured temperature, with the g value independent of microwave frequency and temperature. (b) A linear broadening of the ESR signal as a function of microwave frequency is noticed. The observed linear frequency dependence of ESR signal width points to a distribution of g factors causing the non-Lorentzian line shape, and the g broadening contribution is found to be very small. (c) The ESR process is found to be characterized by slow and fast components, whose temperature dependences could be well described by a tunneling level state model. This work not only could help in advancing the present fundamental understanding on the edge spin (or magnetic)-based properties of GNRs but also pave the way to GNR-based spin devices.
引用
收藏
页码:7615 / 7623
页数:9
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