Nanoscale capacitance microscopy of thin dielectric films

被引：80

作者：

Gomila, G. ^{[1
]}

Toset, J.

Fumagalli, L.

机构：

[1] Univ Barcelona, IBEC, CIBER Bioingn Biomat & Nanomed, Barcelona 08028, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 02期

关键词：

D O I：

10.1063/1.2957069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin dielectric films. The model displays a logarithmic dependence on the tip-sample distance and on the film thickness-dielectric constant ratio and shows an excellent agreement with finite-element numerical simulations and experimental results on a broad range of values. Based on these results, we discuss the capabilities of nanoscale capacitance microscopy for the quantitative extraction of the dielectric constant and the thickness of thin dielectric films at the nanoscale. (c) 2008 American Institute of Physics.

引用

页数：8

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