Dissolution in a supercritical liquid as a mechanism of laser ablation of sapphire

被引：23

作者：

Dolgaev, SI ^{[1
]}

Karasev, ME ^{[1
]}

Kulevskii, LA ^{[1
]}

Simakin, AV ^{[1
]}

Shafeev, GA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Waves Res Ctr, Moscow 119991, Russia

来源：

QUANTUM ELECTRONICS | 2001年 / 31卷 / 07期

关键词：

laser ablation; sapphire; hydrothermal dissolution; supercritical liquid;

D O I：

10.1070/QE2001v031n07ABEH002009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The laser ablation of sapphire is studied by irradiating its interface with water and aqueous solutions of KOH, KCI and Na2CO3 by 2.92-mum 130-ns holmium laser pulses. The ablation rate depends on the concentration and type of the dissolved substance. The highest ablation rate is 2.5 mum per pulse for a laser fluence of 120 J cm(-2). The ablation of sapphire is attributed to its dissolution in water or in aqueous solutions in the supercritical state.

引用

页码：593 / 596

页数：4

共 16 条

[1] BELYAEV LM, 1974, RUBIN SAPFIR
[2] BUNKIN FV, 1980, USP FIZ NAUK+, V130, P193, DOI 10.1070/PU1980v023n02ABEH004904
[3] BUNKIN FV, 1971, PISMA ESKP TEOR FIZ, V13, P479
[4] Chernov A.A., 1980, SOVREMENNAYA KRISTAL, V3
[5] Dolgaev S. I., 1996, Quantum Electronics, V26, P65, DOI 10.1070/QE1996v026n01ABEH000590
[6] Deposition of nanostructured Cr2O3 on amorphous substrates under laser irradiation of the solid-liquid interface
Dolgaev, SI
Kirichenko, NA
Shafeev, GA
[J]. APPLIED SURFACE SCIENCE, 1999, 138 : 449 - 454
[7] Heteroepitaxial growth of oxides on sapphire induced by laser radiation in the solid-liquid interface
Dolgaev, SI
Voronov, VV
Shafeev, GA
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (01): : 87 - 92
[8] Fast etching of sapphire by a visible range quasi-cw laser radiation
Dolgaev, SI
Lyalin, AA
Simakin, AV
Shafeev, GA
[J]. APPLIED SURFACE SCIENCE, 1996, 96-8 : 491 - 495
[9] Grigorev I.S., 1991, Physical Quantities: Handbook
[10] LOBACHEV AN, 1968, GIDROTERMALNYI SINTE

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