Atomic scale analysis of InGaN multi-quantum wells

被引：5

作者：

Benamara, M ^{[1
]}

Liliental-Weber, Z ^{[1
]}

Swider, W ^{[1
]}

Washburn, J ^{[1
]}

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN multiquantum wells grown by MOCVD on GaN have been investigated by transmission electron microscopy techniques and numerical analysis of high resolution (HREM) images. One objective of this research was to correlate the atomic structure and emission mechanisms of InGaN quantum well The studied layers contained 13% or 20% In. It was shown that GaN/InGaN interfaces are rather rough and exhibit an oscillating contrast. Structural defects were found on these interfaces. The relative c-lattice parameter variation in the well was determined using numerical processing of HREM images. The lattice spacings appear to be larger than that expected from Vegard's law suggesting the presence of a biaxial strain. Further observations also revealed a redistribution of In within the well. Instead of a continous In-rich layer, quantum dots were often observed along the well with a regular spacing. The formation of these In-rich dots was not intented and their presence suggests either a periodic modulation of strain along the well or In-rich cluster formation.

引用

页码：357 / 362

页数：6

共 13 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[2]

ELMASRY NA, 1998, APPL PHYS LETT, V72

[3]

GRUDOWSKI PA, 1997, APPL PHYS LETT, V71

[4]

HO L, 1996, APPL PHYS LETT, V69, P2701

[5] Strain-related phenomena in GaN thin films [J].

Kisielowski, C ;

Kruger, J ;

Ruvimov, S ;

Suski, T ;

Ager, JW ;

Jones, E ;

LilientalWeber, Z ;

Rubin, M ;

Weber, ER ;

Bremser, MD ;

Davis, RF .

PHYSICAL REVIEW B, 1996, 54 (24) :17745-17753

[6] Atomic scale indium distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N quantum well structure [J].

Kisielowski, C ;

Liliental-Weber, Z ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6932-6936

[7]

Kisielowski C, 1998, MATER RES SOC SYMP P, V482, P369

[8]

KRUEGER J, 1997, MAT RES SOC P, V468, P299

[9] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J].

Narukawa, Y ;

Kawakami, Y ;

Funato, M ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :981-983

[10]

PERLIN P, 1998, APPL PHYS LETT, V73

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