High power terahertz quantum cascade lasers with symmetric wafer bonded active regions

被引：79

作者：

Brandstetter, Martin ^{[1
,2
]}

Deutsch, Christoph ^{[1
,2
]}

Krall, Michael ^{[1
,2
]}

Detz, Hermann ^{[2
,3
]}

MacFarland, Donald C. ^{[2
,3
]}

Zederbauer, Tobias ^{[2
,3
]}

Andrews, Aaron M. ^{[2
,3
]}

Schrenk, Werner ^{[2
,3
]}

Strasser, Gottfried ^{[2
,3
]}

Unterrainer, Karl ^{[1
,2
]}

机构：

[1] Vienna Univ Technol, Photon Inst, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Ctr Micro & Nanostruct, A-1040 Vienna, Austria

[3] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 17期

基金：

奥地利科学基金会;

关键词：

Wafer bonding - Surface plasmons - Quantum cascade lasers;

D O I：

10.1063/1.4826943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We increased the active region/waveguide thickness of terahertz quantum cascade lasers with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique. In this way, we enhance the generated optical power in the cavity and the mode confinement. We achieved 470 mW peak output power in pulsed mode from a single facet at a heat sink temperature of 5 K and a maximum operation temperature of 122 K. Furthermore, the devices show a broad band emission spectrum over a range of 420GHz, centered around 3.9 THz. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：5