Study of Terahertz Emission from Bulk GaxIn1-xAs Crystals Photoexcited by Femtosecond Laser Pulses

被引:0
作者
Ko, Youngok [1 ]
Sengupta, Suranjana [2 ]
Dutta, Partha [1 ]
Tomasulo, Stephanie [2 ]
Wilke, Ingrid [2 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
来源
2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2008年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the study of terahertz emission from bulk GaxIn1-xAs crystals as function of semiconductor properties. We demonstrate that both optical rectification and ultrafast photocurrents contribute to terahertz emission depending on the Ga mole fraction and microcrystal size.
引用
收藏
页码:834 / +
页数:2
相关论文
共 6 条
[1]   Enhanced terahertz emission from impurity compensated GaSb -: art. no. 045328 [J].
Ascázubi, R ;
Shneider, C ;
Wilke, I ;
Pino, R ;
Dutta, PS .
PHYSICAL REVIEW B, 2005, 72 (04)
[2]   CALCULATION OF OPTICAL-EXCITATIONS IN CUBIC SEMICONDUCTORS .3. 3RD-HARMONIC GENERATION [J].
CHING, WY ;
HUANG, MZ .
PHYSICAL REVIEW B, 1993, 47 (15) :9479-9491
[3]   CALCULATION OF OPTICAL-EXCITATIONS IN CUBIC SEMICONDUCTORS .2. 2ND-HARMONIC GENERATION [J].
HUANG, MZ ;
CHING, WY .
PHYSICAL REVIEW B, 1993, 47 (15) :9464-9478
[4]  
KAI L, 2006, PHYS REV B, V73, P7401
[5]   Transition from photocurrent surge to resonant optical rectification for terahertz generation in p-InAs [J].
Mu, Xiaodong ;
Ding, Yujie J. ;
Zotova, Yuliya B. .
OPTICS LETTERS, 2007, 32 (22) :3321-3323
[6]  
Suzuki M, 2005, AIP CONF PROC, V772, P1206, DOI 10.1063/1.1994545